发明名称 |
Method for the deposition of high-quality crystal epitaxial films of iron |
摘要 |
A method for forming a single crystal epitaxial film of a selected metal on the surface of a substrate. The method includes the steps of positioning the substrate in an ultra high vacuum environment and exposing the substrate surface to a metalorganic vapor including ions of the selected metal while maintaining an ultra high vacuum environment.
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申请公布号 |
US4508590(A) |
申请公布日期 |
1985.04.02 |
申请号 |
US19830532938 |
申请日期 |
1983.09.16 |
申请人 |
KAPLAN, RAPHAEL;BOTTKA, NICHOLAS |
发明人 |
KAPLAN, RAPHAEL;BOTTKA, NICHOLAS |
分类号 |
C30B25/02;(IPC1-7):C30B23/02 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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