发明名称 Method for the deposition of high-quality crystal epitaxial films of iron
摘要 A method for forming a single crystal epitaxial film of a selected metal on the surface of a substrate. The method includes the steps of positioning the substrate in an ultra high vacuum environment and exposing the substrate surface to a metalorganic vapor including ions of the selected metal while maintaining an ultra high vacuum environment.
申请公布号 US4508590(A) 申请公布日期 1985.04.02
申请号 US19830532938 申请日期 1983.09.16
申请人 KAPLAN, RAPHAEL;BOTTKA, NICHOLAS 发明人 KAPLAN, RAPHAEL;BOTTKA, NICHOLAS
分类号 C30B25/02;(IPC1-7):C30B23/02 主分类号 C30B25/02
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