Method for determining the characteristic behavior of a metal-insulator-semiconductor device in a deep depletion mode

摘要

First and second voltage sweeps are applied to a metal-insulator-semiconductor device with the device in a deep depletion mode during at least a portion of each sweep. Capacitance-voltage characteristics of the device are determined for at least a portion of each sweep while the device is in the deep depletion mode. Minority carrier generation parameters of the device in the deep depletion mode are determined based on the capacitance-voltage characteristics for the first and second voltage sweeps.