| 发明名称 |
DIELECTRIC STRUCTURE FOR SEMICONDUCTOR DEVICE |
| 摘要 |
This invention is for a dielectric structure for semiconductor devices which provides an oxygen barrier to preserve the high charge at a silicon-silicon oxide interface, and also serves as a barrier to mobile charges in a thin film of silicon oxide. The invention also provides for a structure and method of eliminating low-voltage dielectric breakdown at the border of the active and inactive regions in a semiconductor device.
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| 申请公布号 |
US3649888(A) |
申请公布日期 |
1972.03.14 |
| 申请号 |
USD3649888 |
申请日期 |
1969.05.14 |
| 申请人 |
INTERNATIONAL TELEPHONE AND TELEGRAPH CORP. |
发明人 |
DORMAN C. PITZER;WALTER B. BRADDOCK;RICHARD C.G. SWANN;ANTHONY E. PYNE |
| 分类号 |
H01L29/78;H01L21/00;H01L21/283;H01L21/331;H01L23/29;H01L29/06;H01L29/73;(IPC1-7):H01L11/06;H01C7/14 |
主分类号 |
H01L29/78 |
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