发明名称 SEMICONDUCTOR DEVICE FOR PRODUCING RADIATION IN RESPONSE TO INCIDENT RADIATION
摘要 A semiconductor device for producing radiation in response to incident radiation of wavelength is made of a sandwich of semiconductor materials providing electrically in series a radiation detector which responds electrically to incident radiation, a capacitor for integrating the effect of the incident radiation and a radiation emitting diode which produces output radiation of a different wavelength and of intensity representative of the intensity of the incident radiation.
申请公布号 US3649838(A) 申请公布日期 1972.03.14
申请号 USD3649838 申请日期 1968.07.25
申请人 MASSACHUSETTS INSTITUTE OF TECHNOLOGY 发明人 ROBERT J. PHELAN JR.
分类号 H01L31/12;(IPC1-7):H01J39/12 主分类号 H01L31/12
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