发明名称 |
SEMICONDUCTOR DEVICE FOR PRODUCING RADIATION IN RESPONSE TO INCIDENT RADIATION |
摘要 |
A semiconductor device for producing radiation in response to incident radiation of wavelength is made of a sandwich of semiconductor materials providing electrically in series a radiation detector which responds electrically to incident radiation, a capacitor for integrating the effect of the incident radiation and a radiation emitting diode which produces output radiation of a different wavelength and of intensity representative of the intensity of the incident radiation.
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申请公布号 |
US3649838(A) |
申请公布日期 |
1972.03.14 |
申请号 |
USD3649838 |
申请日期 |
1968.07.25 |
申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
ROBERT J. PHELAN JR. |
分类号 |
H01L31/12;(IPC1-7):H01J39/12 |
主分类号 |
H01L31/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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