| 摘要 |
PURPOSE:To enable easy crystallization from a seed section without the decrease in thermal conductivity in the seed section by a method wherein a substance serving as a mask at the time of impurity introduction is deposited over the entire surface, after a gate electrode is formed on a single crystal semiconductor layer of the lower layer. CONSTITUTION:First, an SiO2 film 20 is formed on an Si single crystal substrate 10 and then partly opened by etching into the seed 40, a poly-Si film being successively formed and then single-crystallized by the laser annealing method, and the gate electrode 30 being then formed by leaving necessary parts 12 and 11 and by etching-removal of the other part. Next, at the time of annealing the Si film of the upper layer, patterning is carried out so as to cover the part 12 serving as the seed, and then the film is left as a resist film 50. An MOS type transistor is formed with the film as a mask. After the resist film 50 is exfoliated, the part 41 serving as a seed is bored. Thereafter, a poly-Si film 13 is deposited over the entire surface and then single-crystallized by the laser annealing method. |
