| 摘要 |
PURPOSE:To improve electrostatic charging characteristics and sensitivity of an electrophotographic sensitive body composed essentially of a-Si:H by forming the a-Si photosensitive body doped with a slight amt. of chalcogen element by the reactive sputtering method. CONSTITUTION:The photoconductive layer of an electrophotographic sensitive body made of a-Si:H contg. a slight amt. of chalcogen element, such as S, Se, or Te, is formed by the reactive sputtering method using a target composed essentially of Si and a reactive gas contg. H2. As the process for introducing a slight amt. of chalcogen element to a-Si:H, (1) an Si target contg. a chalcogen element, (2) a chalcogen target is arranged in addition to the Si target, (3) a gas contg. chalcogen is introduced into an atmosphere gas, and the like processes are enumerated. The a-Si:H photosensitive body doped with a slight amt. of chalcogen element obtained by the reactive sputtering method is higher in resistivity and better in charging characteristics and photosensitivity than the ones prepared by the plasma CVD method, and a-Si:H having excellent characteristics as an electrophotographic sensitive body can be formed. |
