| 摘要 |
PURPOSE:To contrive the prevention of the oxidation of a material in a cavity and the reduction of the loss of gas dispersion by a method wherein a semiconductor package is arranged in close contact with the bottom surface of the main unit of the titled device, and a periphery of the cavity of the package is then filled with an inert gas. CONSTITUTION:The inert gas is led through a gas introduction liner 3 into a U-shaped gas liner 8 while being warmed by heaters 2 of the main unit 1 of the device. This gas liner 8 surrounds the package 5 from three directions. When the gas liner 8 is filled with the inert gas, the gas is led through a gas reheating part 9 into a gas reservoir 10, where the flow velocity is reduced. A gas exhaust port 11 surrounds the package 5 from three directions, being cut in plane, and continuous. Therefore, the inside of the cavity 6 of the package 5 is filled with the gas by exhaust of the gas out of the gas exhaust port 11 at a low speed and in the form of planar layer, and further the inside of the cavity 6 can be accordingly shut off from the outer air. |
