| 摘要 |
PURPOSE:To enable the increase in the operating lifetime of an integrated circuit in a field of radiation by a method wherein a heat generating circuit independent of the integrated circuit is provided on the same chip in proximity to this circuit. CONSTITUTION:Using a TTL circuit 21 as the integrated circuit, the heat generating circuit consists of a power transistor 31, and these are integrated within the same chip 1. Only the circuit 21 is in operation at the initial state. At this time, the parameter of each transistor constituting the TTL circuit deteriorates momentarily by continuance of exposure to radiation. So, the supplied power to the circuit 21 is stopped prior to that step, the power being supplied to the transistor 31, and its amount of heat being then transmitted to the circuit 21 leading to annealing. As a result, the apparent absorbed dosage of radiation decreases, and accordingly the current amplification factor of the transistor recovers. Repetition of these actions enables the remarkable prolongation of the lifetime of circuit actions in a field of radiation. |
