发明名称 ELECTRODE FORMATION OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve the workability by elimination of the mask alignment of a metal mask by a method wherein polyimide series resin is applied after a bump junction metal is formed, in electrode formation by the use of a solder ball. CONSTITUTION:An aluminum wiring 3 is formed on an oxide film 2 of an Si semiconductor wafer 1, being then convered with a final passivation film 4, which is etched for window opening, resulting in the exposure of the wiring 3, and the bump junction metal 5 is formed thereon. Next, the polyimide series resin 6 is applied with a thickness approximately of the diameter of the solder ball, a window hole being bored in the metal 5 by photo process, and the solder ball 7 being then put in. This ball 7 does not need to be put in by positioning, but can be put in a manner of rolling over the wafer. Thereafter, flux 8 is applied to the metal 5 and the ball 7, which ball 7 is then heated. As a result of heating, the ball 7 turns by the effect of the flux 8 into a solder electrode 7' formed on the metal 5, and afterwards the resin 6 is removed.
申请公布号 JPS6055643(A) 申请公布日期 1985.03.30
申请号 JP19830163577 申请日期 1983.09.06
申请人 SEIKO DENSHI KOGYO KK 发明人 TERUI YOSHITERU
分类号 H01L21/60 主分类号 H01L21/60
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