| 摘要 |
PURPOSE:To prevent the disconnection of a metallic fine wire of a resin-sealed MOS IC from an internal circuit by a method wherein the second conductive films is formed on the first conductive film formed on an oxide film, via insulation film having at least two points of apertures. CONSTITUTION:A poly Si film 11 as the first conductive film is formed on a field oxide film 2 formed on a semiconductor substrate 1. An Al wiring 4 and an Al pad 4' as the second conductive film are integrally formed on the poly Si film 11 via insulating oxide film 10, and the film 11 is connected to the pad 4' and the wiring 4 through the apertures 12 and 12'. The metallic fine wire 7 is bonded to the pad 4', thus forming a connection part 6. Even if the exposed part 8 of the pad 4' is corroded by phosphoric acid produced by the water and phosphorus infiltrating through the resin, the Al pad part beneath the center of the connection part 6 of the fine wire 7 is not corroded; therefore the fine wire 7 is not disconnected because of connection to an N type diffused layer 3 connected to the internal circuit. |
