| 摘要 |
PURPOSE:To enhance the reliability by increase in the junction strength with an aluminum wire by a method wherein an aluminum plated layer is formed on the metallized pattern of a ceramic package. CONSTITUTION:In the package 10, the tungsten metallized pattern 18 conducting to outer leads 24 is formed on an intermediate stepwise difference 14, and an Ni- plated layer 20 is formed thereon, and the aluminum plated layer 26 in the uppermost part. This layer 26 is made of plating with e.g. nonaqueous solvent series plating bath at 2A/dm<2>. The aluminum wire is laid to an aluminum-evaporated part formed on this semiconductor element and to the layer 26 on the stepwise difference 14 by thermocompression bonding or the ultrasonic wave method. Thereby, the junction strength increases, and this package becomes excellent in reliability, without the formation of a fragile hetero-intermetallic compound at the junction part. |
