| 摘要 |
PURPOSE:To prevent the short-circuit of the P-N junction and the deterioration of characteristics by a method wherein the final epitaxial layer is etched in groove form along a stripe in the case of the fusing of a semiconductor laser pellet on a heat sink by up-side-down manner in order to reduce the heat resistanc. CONSTITUTION:A thick cap layer 12 is provided and then etched in groove form along the stripe 11 in order to facilitate diffusion. The mounting of the semiconductor laser chip thus obtained causes the operating part of the semiconductor laser to separate from a fusing material 19 because of the thickness of the cap layer 12. Thereby, adverse influences on the chip such as the creeping-up of the material 19 can be removed. |
