| 摘要 |
PURPOSE:To effect the sure addition of a desired amount of impurity to a raw material in the growth of a III-V compound semiconductor single crystal doped with impurity, by welding the impurity at the tip of the seed crystal, and immersing and dissolving the impurity in the molten raw material. CONSTITUTION:The Si11 acting as an impurity is welded to the tip of the seed crystal 10. The polycrystalline GaAs (raw material) and an encapsulation material (B2O3) are put into the quartz crucible 4 placed in the high-pressure vessel 1 (2 is carbon heater and 3 is carbon surrounding the quartz crucible). The quartz crucible 4 is heated to cover the molten GaAs 9 with the molten B2O3, and the seed crystal 10 is immersed in the molten GaAs 9 to effect the dissollutiin of the tip Si11 in the molten liquid 9 and obtain a molten GaAs doped with a required amount of Si. The seed crystal 10 is pulled up by conventional process to obtain the grown GaAs compound semiconductor containing Si as an impurity. |
