| 摘要 |
PURPOSE:To transfer an ultrafine mask pattern to a lower layer resist in high resolution by superposing a high sensitivity positive resist in the prescribed thickness on a low sensitivity positive resist, and exposing the X-ray in suitable amount. CONSTITUTION:Low and high sensitivity positive resists 9, 8 are superposed on a wafer 5, the thickness of the layer 8 is formed slightly thicker than several thousands Angstrom of flying distance in the layer 8 of photon Auger electron emitted from an Au pattern 7 of an X-ray mask 4, the X-ray is emitted in a suitable exposure amount in the film thickness reference of the resist 9, and the mask pattern 7 is transferred through the upper layer 8 to the lower layer 9. In this case the photon Auger electron 10 emitted from the Au pattern is exposed on the layer 8, and since the layer 8 has high sensitivity, sufficient resist decomposition reaction occurs, and all are dissolved by development. According to this structure, copy of submicron order width in high resolution can be reliably performed, and the influence of the secondary electron can be removed at the resist side. Accordingly, the degree of freedom can be given to the design of the X-ray mask. |
