发明名称 ION MICROBEAM IMPLANTING APPARATUS
摘要 <p>An ion microbeam implanting apparatus is composed of an ion source (1), a beam focusing system for effecting acceleration, focusing, mass separation and deflection of ions emitted from the ion source (1), and a sample table (3) for affecting very fine movement of a sample. For the ion mass separation effected in the beam focusing system, a Wiener filter (4) is employed in which uniform electric and magnetic fields are made orthogonal to each other. A linear optical axis is bent in the Wiener filter (4) such that the beam axis of ions emitted from the ion source and the beam axis of ions to be implanted into the sample intersect each other.</p>
申请公布号 WO1985001389(P1) 申请公布日期 1985.03.28
申请号 JP1984000372 申请日期 1984.07.20
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