| 摘要 |
PURPOSE:To obtain an electrode structure in which a purple break does not occur by covering electrodes made of aluminum or aluminum alloy with metal through a high melting point metal nitrided film or a high melting point metal carbide film when forming the electrodes at a semiconductor device, and connecting a gold wire thereto. CONSTITUTION:An aluminum film 2 which has 1.5mum of thickness is formed on the surface forming region of a semiconductor substrate 1, and a high melting poit metal film 6 such as TiN is covered in a thickness of approx. 3,000Angstrom thereon. Then, a gold film 7 which has 3,000-6,000Angstrom of thickness is covered thereon, and a gold wire 3 is bonded thereto. The film 6 may be not only TiN but TiC, W, Mo, or Ta, and an Au film 8 which has 3,000-6,000Angstrom of thickness may be interposed between the films 6 and 7. Thus, a function of a barrier layer is provided in the film 6, and the reaction of Au and aluminum which are disposed at the upper and lower portions is prevented to eliminate a purple break. |
