| 摘要 |
PURPOSE:To reduce the capacity of a gate and to enhance the withstand voltage by slightly isolating an interval of a gate electrode made of high melting point metal and N<+> type regions disposed at both sides of the electrode when forming a Schottky barrier junction gate FET. CONSTITUTION:An N type GaAs operation layer 22 is grown on a semi-insulating GaAs substrate 21, a high melting point metal layer 23 made of W or the like for forming a Schottky junction is formed at the center on the surface, and the entire surface which includes it is covered with an SiO2 film 24. Then, Si<+> ions to become doner are implanted to produce N<+> type source and drain region 25 isolated slightly from the layer 23 while including the layer 22 directly under the layer 23, the film 24 is allowed to remain only on the side wall 26 of the layer 23, and the other is removed. A metal layer 27 for ohmic electrode is covered on the overall surface, with a resist film 1=29 as a mask only the film 27 at the top of the layer 23 is removed. Ohmic electrodes 30, 31 are covered corresponding to the region 25 on the remaining film 27. |
