| 摘要 |
PURPOSE:To obtain a photoconductive member which has photosensitivity at the long wavelength side and no deteriorating phenomenon in case of repetitive use by laminating the first the first amorphous layer which includes GexSi1-x (0.95< x<=1), an intermediate layer which exhibits photoconductivity, and the second amorphous layer which includes Si atoms and N2 atoms on a conductive or insulating support. CONSTITUTION:The first amorphous layer 103 which includes GexSi1-x (0.95<x <=1), an intermediate Si layer 104 which includes substance for controlling the conductive characteristic, and the second amorphous material layer 105 which includes Si atoms and N2 atoms are laminated on a conductive or insulating support 101, and liquid phase epitaxially grown. In this structure, the distribution of Ge atoms in the layer 103 is uniformly diffused in the layer thicknesswise direction and in the horizontal direction of the substrate 10, and the thickness is selected to 50Angstrom -30mum. No Ge is contained in the layer 105, and the thickness is to 2-50mum. Here, the laminated layers may be P-N-P, or N-P-N type. |
