| 摘要 |
PURPOSE:To suppress damage by irradiation during beam annealing and uniformize the annealing by forming a high melting point metal film on the semiconductor thin film to be annealed. CONSTITUTION:An SiO2 layer 12 is formed on a single crystal Si substrate 11. Then, a polycrystalline Si thin film 13 is deposited on the layer 12. A high melting point metal film, for example, W film 14 is formed thereon. Thereafter, the film 13 is annealed by irradiation of electron beam from the upper part. Thereby, the film 13 shown remarkable increase of crystal grain size and changes to a high quality Si thin film crystal layer 13'. According to this manufacturing method, about 50% of electron beam energy is absorbed by the film 14 and damage by beam irradiation can be reduced to such a degree as can be ignored for practical use. In addition, heat is quickly diffused to the entire part during annealing and uniform temperature distribution in the sample can be realized. Thereby, uniformity of annealing can be improved. |
