| 摘要 |
<p>The disclosure relates to a system for implanting ions into a target element including a source arrangement (130) for producing an ion beam (131); a beam analyzing arrangement (140) for receiving the ion beam and selectively separating various ion species in the beam on the basis of mass to produce an analyzed beam; and a beam resolving arrangement (150) disposed in the path of the analyzed beam for permitting a preselected ion species to pass to the target element (171). The ion source arrangement (130) has an exit aperture (132) electrically biased to a preanalysis acceleration voltage, an extraction electrode (137) near the aperture and biased to accelerate ions from the aperture and a deceleration electrode (138) downstream of the acceleration electrode (137) biased to decrease the velocity of the ions passing between the electrodes to provide a high extraction-potential and also a low velocity at entry to the beam analyzing arrangement.</p> |
