| 摘要 |
PURPOSE:To remove the possibility of a contamination due to a photoresist by using a double layer consisting of first and second metallic films of In or the like and of Al or the like, respectively, as the electrode of an HgCdTe photoconductive type infrared detector. CONSTITUTION:An HgCdTe layer 2 is formed on an insulative substrate 1 and the surface of the layer 2 is oxidized, on which is formed a light- transmissive insulating film 3. Then, this film 3 is removed from an electrode forming region, in which a first metallic film is formed to constitute electrodes 4 and 5. Thereafter,a second metallic film is formed, which is removed from a light incident window region 7 and, using a photoresist film 9 as a mask, an element separation is performed by etching the HgCdTe layer 2. Then, after the photoresist film 9 is dissolved to be removed, the second metallic film 6 and the side surfaces of the HgCdTe layer 2 are oxidized by means of an anodization to form a passivation film 21. |
