发明名称 HEATING PROCESS DEVICE
摘要 PURPOSE:To improve the accuracy of the temperature control by inserting a temperature sensing element into a temperature sensor material made of the same material as that of the wafer holding stand which is provided near the circumference of the wafer holding stand. CONSTITUTION:A silicon wafer 13 is placed on the upper surface of a wafer holding stand 14 and is rotated by a drive motor 16. After the air inside is discharged, reaction gas is introduced into the reaction chamber through a gas supply nozzle 11 with specified pressure. At this time, the power to be supplied into the infrared ray lamp 19 is controlled with the temperature detected by a thermocouple 18 inserted in the temperature sensing material 17 to heat the wafer up to the specified temperature. The fact that the temperature sensing material 17 is made of the same material as that of the wafer holding stand 14, with the equal absorption ration for the infrared light, allows the accurate temperature control.
申请公布号 JPS61251125(A) 申请公布日期 1986.11.08
申请号 JP19850093023 申请日期 1985.04.30
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KARATSU KAZUHIRO;NOZAKI JUNICHI
分类号 H01L21/205;H01L21/31 主分类号 H01L21/205
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