发明名称 |
CHEMICAL VAPOR DEPOSITION APPARATUS |
摘要 |
An improved chemical vapor deposition device having heating means substantially surrounding an inner deposition chamber for providing isothermal or precisely controlled gradient temperature conditions therein. The internal components of the chamber are quartz or similar radiant energy transparent material. Also included are special cooling means to protect thermally sensitive seals, structural configurations strengthening areas of glass components subjected to severe stress during operation, and specific designs permitting easy removal and replacement of all glass components exposed to deposition gas. |
申请公布号 |
ZA8406121(B) |
申请公布日期 |
1985.03.27 |
申请号 |
ZA19840006121 |
申请日期 |
1984.08.07 |
申请人 |
ANICON, INC. |
发明人 |
BRYANT A. CAMPBELL;RALPH F. MANRIQUEZ;DALE R. DUBOIS;NICHOLAS E. MILLER |
分类号 |
C23C16/44;C23C16/455;C23C16/48;H01L21/205;H01L21/285 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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