| 摘要 |
PURPOSE:To reduce the impact due to ions and to form a CVD film, which has a good adherence and has little damage, on the substrate at low temperatures by a method wherein the first electrode for ion rate control and the filament for ion neutralization are provided under the plasma lead-out holes. CONSTITUTION:In a reaction chamber 20, a first electrode 29 and a filament 30 are provided under plasma lead-out holes 21. the reasons of providing the plasma lead-out holes 21 are one for preventing an injury from being inflicted on the first electrode 29, the filament 30, and furthermore, on a substrate 26 by making microwaves propagate in the reaction chamber 20 and one for preventing the second gas, silane gas, from being reduced into pulverized silicons. The first electrode 29 is constituted so that its voltage can be changed to -1kV-+1kV according to the acceleration and deceleration of nitrogen ions in the plasma to be grown in a plasma growing chamber 13. The filament 30 is make of tungsten so that the amount of its thermion can be changed to 0-10V in a capacity of 1kW. As a result of the above-mentioned constitution, a silicon nitride film, which has a uniformity of adhesion of + or -10% on a 10cm diameter region and has a good adherence, is obtained on the substrate 26 at a sticking rate of 400Angstrom /min. |
