| 摘要 |
PURPOSE:To obtain a semiconductor device with a thick GaAs substrate, parasitic capacitance thereof is small and which is handled easily, by forming a metallic layer, which penetrates through the GaAs substrate and is connected to an electrode, to the back of the GaAs substrate. CONSTITUTION:A semiconductor element 3 is formed to an active layer 2 shaped to the surface of a semi-insulating GaAs substrate 1 in 200-600mum thickness. An opening section 5 is formed to the GaAs substrate 1 in the lower section of an electrode 4 connected to the semiconductor element 3, and a conductive metal 6 is shaped to the back of the GaAs substrate 1 and into the opening section 5 and conducted with the electrode 4. In a semiconductor device constituted in this manner, the parasitic capacitance of a circuit element is reduced because the GaAs substrate keeps initial thickness. Yield is improved and the semiconductor device having high reliability is obtained because the GaAs substrate is handled easily. A groove 7 is formed to the lower section of a section, in which calorific value is particularly much, in the semiconductor element 3, and heat generated in the semiconductor element 3 is dispersed to the outside through the metal 6' in the groove 7. |
