| 摘要 |
PURPOSE:To enable to process various kind thin film materials by dry etching with high precision of size without using a resist mask or without applying almost no damage to the resist mask even when the resist mask is used by a method wherein a synchrotron orbit radiant beam (SOR) is used for an exciting beam source. CONSTITUTION:A X-ray resist film 3 is formed on the Al film 2 of a material to be processed, and a resist pattern is formed according to the X-ray exposure method [the figure (a)]. Then, the said sample is exposed in a chloride 4 atmosphere such as BCl3, CCl4, etc. as shown with the figure (b), and the whole surface is exposed to an SOR5. At this case, because the mean free path of an active seed resolved and excited according to the SOR is short owing to high pressure of reactive gas, reactive gas only in the neighborhood of the surface of the Al film acts practically, and a perpendicular Al pattern shape generating no side etching can be formed reflecting the rectilinearly propagating property of the SOR. The resist on the Al film is removed finally to obtain the desired Al pattern. |
