| 摘要 |
PURPOSE:To enable obtaining a good quality hetero epitaxial multilayer which includes GaAlAs and InGaP in good reproducibility and producing a light emitting device such as visible light emitting semiconductor laser by forming a semiconductor layer which is to be grown using an In solusion by a vapor phase epitaxy process immediately after LPE (liquid phase epitaxy) growth using a Ga solusion. CONSTITUTION:On a GaAs substrate 11, a GaAlAs layer 12 is grown by an LPE process. Then, the crystal is taken out of an electric furnace and an InGaP layer 13 is grown by an MOCVD or MBE process. Later, a GaAlAs layer 14 is grown as necessary again by the LPE process. If forming of the InGaP layer 13 is again required on the GaAlAs, the above-mentioned processes are repeated. The obtained GaAlAs/InGaP/GaAlAs hetero multilayer crystal is excellent in flatness and mirror effect, the interface which does not include such as Ga or In is plain and is a good crystal. |
