| 摘要 |
PURPOSE:To form a thin film which has greater adhesive strength to a sample substrate and excellent controllability of thickness pattern by heating with irradiation of laser light which ranges from ultraviolet (u.v.) to infrared (i.r.) after the thin film is formed on the sample substrate using optical dissociation of a compound gas of metal and semiconductor by irradiation of u.v. laser light. CONSTITUTION:Visible laser light generated from a laser oscillator 1 is partly converted to the second harmonic by a second harmonic generator 2 and the output is used as an u.v. laser light. An inert gas is sent into a thin film forming cell 11 through a compound cylinder 18 from a carrier gas inlet 17, u.v. laser light is made to irradiated on a sample substrate 10 opening an u.v. light shutter 7 and a thin film is formed where the u.v. light is made to irradiated on the sample substrate 10 by optical dissociation of compound gas. When the thin film becomes a desired thickness, the u.v. light shutter 7 is closed and the compound gas is removed from the thin film forming cell 11. Then, visible laser light adjusted in appropriate strength is made to irradiated where the thin film is formed on the sample substrate 10 opening a visible light shutter 6. By this process, only a portion where the thin film is formed can be heated sufficiently and the adhesive strength of the thin film to the sample substrate 10 can greatly be improved. |
