| 摘要 |
PURPOSE:To enable to control the etching shape of a material to be processed utilizing active particle concentration distribution in the interelectrode direction by a method wherein only electrodes at the parts installed with the materials to be processed are made to ascend and descend. CONSTITUTION:A cathode 5 is provided in a reaction chamber 3 holding positional relation in parallel with a plane anode 4. A high-frequency electric power source 6 is connected to the cathode 5, and insulated electrically from the reaction chamber 3 by an insulator 7. Moreover, sample stages 9 consisting of an insulator and to be put thereon with materials 8 to be processed are built in the cathode 5, and moreover the sample stages 9 are connected to a sample stage ascent and descent control system 11 through struts 10 consisting of an insulator. When the material 8 to be processed is etched in the condition put on the surface of the cathode 5, anisotropic etching is advanced to etch an Si substrate 2 faithfully to the pattern of an SiO2 mask 1 [the figure (a)]. While, when the material 8 to be processed is etched in the condition lifted up by 10mm. from the surface of the cathode 5 according to the sample stage ascent and descent control system 11, isotropic etching is advanced to form what is called an undercut under the SiO2 mask 1 [the figure (b)]. |
