| 摘要 |
PURPOSE:To enhance the coverages of a conductive layer and an insulating layer at manufacture of a semiconductor device by a method wherein isotropic etching and anisotropic etching are combined. CONSTITUTION:A mask 1 is formed on an insulator 2 formed on the surface of semiconductor substrate 4, and the insulator is isotropically etched using the mask 1 thereof according to an HF solution as to leave slightly a thin oxide film 3 to form the condition shown with the figure (b). The mask 1 is not changed to survive in the eaves type. Then, when the thin oxide film 3 left at above mentioned wet etching is anisotropically etched using the mask 1 thereof to expose the surface of the semiconductor substrate 4 as shown in the figure (c), etching of the oxide film can be attained with favorable precision forming taper 2a. After that, when a conductive layer is formed on the surface exposing the semiconductor substrate 4, a part of the conductive layer thereof is extended on the taper part 2a of the oxide film 2. |
