| 摘要 |
PURPOSE:To reduce the cost of a thin-film transistor, to simplify a manufacturing process and to improve yield by forming a source region and a drain region while using a gate electrode as a mask. CONSTITUTION:A source electrode 24 and a drain electrode 25 are formed, a semiconductor thin-film 26 is shaped, and a gate insulating film 29 is formed on the thin-film 26. A gate electrode 30 is formed, and a source region 27 and a drain region 28 are shaped through an ion implantation method while using the gate electrode 30 as a mask. Since the source and drain regions are formed in a self-alignment manner to the gate electrode, a process is simplified, cost is reduced, and yield can be improved. Since there are impurity regions as the source region and the drain region in the semiconductor thin-film in the structure, contact resistance among the source electrode and the drain electrode and the semiconductor thin-film is extremely small. Accordingly, the lowering of ON currents of a thin-film transistor can be prevented. |
