| 摘要 |
PURPOSE:To obtain a MOS field-effect type transistor having high withstanding voltage even on the small size of an element by each constituting at least one of a source and a drain by specific three semiconductor regions. CONSTITUTION:A gate oxide film 3 is grown on a P type Si substrate 1 with a channel implantation 2, and tungsten 4 is deposited on the oxide film 3. Phosphorus silicate glass 5 is deposited on the gate conductor. A photosensitive resin film 6 is applied on the PSG5, a pattern is formed, and laminated films 3, 4, 5 are etched to shape a gate conductor section. The photosensitive resin film 6 is removed, the whole wafer is coated with phosphorus silicate glass, and the phosphorus silicate glass is removed left only on the side wall section of the gate conductor. The whole wafer is coated with a protective film 5 consisting of phosphorus silicate glass, holes are bored to source-drain sections and phosphorus ions are implanted, and lastly source-drain electrodes 7 are formed. |
