| 摘要 |
<p>PURPOSE:To improve the dampproof property of the title semiconductor device by a method wherein an aperture part is formed at the fuse part of an intermediate insulating film, and a protective film is coated on the edge part of the aperture, thereby enabling to prevent the intermediate insulating film to come in contact with water. CONSTITUTION:In the semiconductor device with which a programing is performed by the conductive or nonconductive status of the fuse 1 consisting of a metal thin film which will be cut by fusing by the laser when programing, an aperture part 3a is formed at the part of the fuse 1 on the intermediate insulating film 3 formed on a field oxide film 5, and a protective film 4 is formed in such a manner that it covers the edge part of said aperture part 3a. As the protective film 4 is coated on the intermediate insulating film 3 as above-mentioned, the intermediate insulating film 3 does not come into contact with water directly even when water passes through a sealing material and reaches a chip, thereby enabling to prevent the generation of elution of the phosphorus contained in PSG.</p> |
