| 摘要 |
PURPOSE:To obtain the full environmental type photoconductive member having excellent photosensitive characteristics on the long wavelength side by a method wherein a photorecepting layer is composed of the first layer of amourphous material containing silicon atoms and the second layer of amorphous material containing silicon atoms and germanium atoms. CONSTITUTION:A photoconductive member 100 has a photorecepting layer 102, having sufficient volume resistance and photoconductivity and containing carbon atoms, which is placed on the supporting member 101 to be used as a photoconductive member. The photorecepting layer 102 haa the layer constitution which has the second layer 104 consisting of a(amorphous)-SiGe(H, X). Photoconductivity may be carried by either of the first and the second layers, but at any rate, it is to be given to the layer on which an incident light reaches. The photoconductivity can be arbitrary controlled by allowing the material which controls the photoconductivity to be contained at least by either of the first layer 103 or the second layer 104. |
