发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT |
摘要 |
PURPOSE:To make the title integrated circuit easily correspond to the change of the circuit only by the alteration of a wiring layer by forming a spare wiring channel while passing at least one part of wirings among all cells through the wiring layer. CONSTITUTION:A spare cell 8 (a 2 input NOR gate) is formed apart from cells 4-7. Terminals 24 for the cells 4-7 are all lead out to wiring patterns 27 (broken lines) for wiring layers once through wiring patterns 25 (solid lines) wirings for diffusion layers and through-holes in the vicinity of the cells. A terminal 24 for the spare cell 8 is also lead out to a wiring layer through a wiring pattern for a diffusion layer and a through-hole 26. That is, at least one parts of mutual wirings for all cells are passed through the wiring layers. Accordingly, gates are removed and the wirings among the cells are varied by cutting and adding the wiring patterns only on the wiring layers. |
申请公布号 |
JPS6052040(A) |
申请公布日期 |
1985.03.23 |
申请号 |
JP19830159687 |
申请日期 |
1983.08.31 |
申请人 |
HITACHI SEISAKUSHO KK;HITACHI COMPUTER ENGINEERING KK |
发明人 |
YAMAKAMI TOSHIYUKI;EDAKAWA MITSUGI;CHIBA KIYOUJI;SAKAI SHIYUNICHI |
分类号 |
H01L21/822;H01L21/3205;H01L21/82;H01L23/52;H01L27/04;H01L27/118 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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