| 摘要 |
PURPOSE:To reduce an effect on storage charges by the semi-insulating properties of a semiconductor substrate by introducing charges to the outside of the semi-insulating substrate through a conductive layer formed on a semi-insulating substrate surface as the opposite surface of a first main surface or under the semi-insulating substrate surface. CONSTITUTION:A protective film 2 is formed on the element forming surface of a semi-insulating GaAs substrate 1. Impurity ions such as silicon ions Si<+> are implanted to the back of the substrate 1, and activated through heat treatment, thus shaping a conductive layer 3. Charges are stored in an electron-ray resist film 4 once by a drawing by electron rays, but potential difference having a large gradient is generated at the shortest distance between the film 4 and the conductive layer 3 at ground potential, and the storage of the charges rapidly disappears by the conductivity of the semi-insulating substrate 1. |
