发明名称 BONDING METHOD OF SILICON CRYSTALLINE BODY
摘要 PURPOSE:To bond firmly silicon crystalline bodies with each other without using a bonding agent by polishing each bonding surface of the silicon crystalline bodies, making respective surfaces hydrophilic, and adhering closely under clean environment. CONSTITUTION:Each bonding surface of two silicon crystalline bodies is specularly ground respectively, and each ground surface is immersed, for example, in a mixed liquid of sulfuric acid and hydrogen peroxide to make the surface hydrophilic. Both surfaces are closely adhered to each other in a clean room, etc. wherein foreign matter is substantially excluded. The bonded part is further heated at >= about 300 deg.C to enhance the bonding strength. The method can be applied to the manufacture of a semiconductor pressure transducer, etc.
申请公布号 JPS6051700(A) 申请公布日期 1985.03.23
申请号 JP19830159276 申请日期 1983.08.31
申请人 TOSHIBA KK 发明人 SHINPO MASARU;FUKUDA KIYOSHI
分类号 C04B37/00;B23K20/24;C30B29/06;C30B33/00;C30B33/06;G01L9/00;H01L21/02;H01L21/18;H01L21/20;H01L21/304;H01L27/12 主分类号 C04B37/00
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