| 摘要 |
PURPOSE:To obtain a good-quality compound semiconductor by supplying a volatile component to the bottom of a nonvolatile melt through a small hole, and allowing said component to react gradually and sufficiently to grow a single crystal. CONSTITUTION:A nonvolatile component In 11 and a sealing material B2O3 13 are charged into a crucible 5, and a volatile component P 14 in excess of an equivalent is charged into a container 6. The B2O3 13 is melted and covers the In 11 melt by heating the crucible 5 with a heater 9. The P 14 is evaporated by heating the container 6 with a heating furnace 10, and mixed into the In melt 11 through a steam supply pipe 7 and a small hole of a steam ejecting port 8 to form an InP compound semiconductor melt 12 which is isolated as a layer between the In 11 and the B2O3 13. After the reaction is nearly completed, an inert gas is introduced and the temp. of the crucible 5 and the container 6 is further increased to carry out a uniform reaction. When a stoichiometrically equivalent InP semiconductor melt 12 having a stable characteristic is formed, a single crystal pulling rod 4 is slowly lowered to grow the semiconductor single crystal. |
