| 摘要 |
PURPOSE:To obtain smooth electrodes while eliminating an alloying step by forming simultaneously with the same metal ohmic contact electrodes of source and drain regions and Schottky contacting electrode of a gate. CONSTITUTION:Si<+> ion implanted layer 12' is formed on the surface layer of a semi-insulating substrate 11, and with a laminated film of an SiO2 film 13 and a photoresist film 14 provided on a gate region as a mask Si<+> ions are implanted to a source forming region 15' and a drain forming region 16'. Then, Ge is implanted to the entire surface, a Ge film 17' is formed on the laminated film, Ge film 17 is formed on the regions 15', 16', and the film 13 is removed together with the films 14, 17'. Subsequently, the layer 12' between the regions 15' and 16' produced by the previous ion implantation is altered to an N type region 12 by As ion implantation, and the regions 15', 16' are altered to N type regions 15, 16. Then, a gate electrode 23g is formed on the region 12, source electrode 23s, 23d are formed on the regions 15, 16, and all of them are formed of a laminate of Ti and Al. |
