| 摘要 |
PURPOSE:To improve the uniformity of electric characteristics by a method wherein a compound semiconductor substrate to be heat-treated and the same substrate containing an excess of a constituent having a high vapor pressure are arranged by opposition so as to closely contact with each other, and are then heat-treated. CONSTITUTION:As the substrate arranged in opposition to the substrate 1 to be heat-treated, the same substrate 2 containing an excess of the component of As is used and heat-treated. Since a higher As vapor pressure than that of the substrate 2 is supplied during heat treatment in this manner, the electrical variation of the substrate 1 can be restrained by restraint of the evaporation of As from the substrate 1. Besides, the difference in As vapor pressure caused by the micro unnevenness of the substrate 1 disappears; therefore the electric characteristics in the surface of the substrate can be maintained uniformly. In arrangement of the substrate 1, it can be opposed to the substrate 2 with the surface of the substrate 1 downward, or can be sandwiched from above and below by means of the substrate 2. |
