| 摘要 |
The method of the invention comprises three steps: a first step consisting in covering the layer 1 of semiconductor material with a layer 3 of solid electrolyte, a second step during which the surface of the semi-conductor material layer is cleaned by carrying out the reduction of oxides 2 which form on this surface, through the solid electrolyte layer 3 and a third step during which the layer 1 of semiconductor material is annealed by exposure to a beam of coherent radiation. Application in particular to the manufacture of semiconductor devices comprising an implanted gallium arsenide layer. <IMAGE>
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