| 摘要 |
PURPOSE:To reduce the floating capacity of a transistor by laminating a semiconductor film and a metal film for source and drain continuously, and then patterning them to equalize the width of the semiconductor and the width of the electrodes. CONSTITUTION:A Ti gate electrode 31 is provided on a glass plate 30, Si3N4 gate insulating film 32, a-Si:H thin film 33, and an aluminum film 36 are continuously laminated to prevent contamination. A resist mask 37 is covered, sequentially etched, and the film 33 and the electrodes 36 are completely equalized in width. The mask is then removed, the resist mask 36 is covered, aluminum is etched, source and drain electrodes 34, 35 are provided, the mask 36 is removed to complete it. According to this construction, the most effective structure for the floating capacity can be formed, and the contracting portion between the semiconductor film and the source, drain electrodes is not contaminated with photoresist and solvent, thereby obtaining a thin film FET having good reproducibility of the characteristics. |
