| 摘要 |
PURPOSE:To improve the maximum breaking current of a GTOSCR by connecting a gate electrode of one side of a cathode emitter layer in an widthwise direction via leads in high resistance from a gate electrode of the other side. CONSTITUTION:In a cathode side flat pattern, S2 is the peripheral edge of an Si substrate, and S1 is a lead connecting side. Cathodes and emitters 2a-2c correspond to cathodes and emitters of the outermost row of GTO elements, gate electrodes are connected to a portion 7a through the internal resistance of a portion 7a connected directly to the lead connection of the central portion and the cathode and the base to the portion 7a, and formed of the portion 7b isolated from the portion 7a in such a manner that the portion 7a is normally gate and the portion 7b is a floating gate. The portions 7a, 7b are disposed at every other layers 2a-2c, and the unit GTO element of the outermost array disposed at the layers 2a-2c as a center are all floating gate elements. According to this construction, the unit elements of the normal gate are sequentially turned OFF from the side near the lead connection, and even if part of the current is moved, the unit element of the floating gate has sufficient breaking capacity, and cut off with margin, thereby increasing the maximum breaking current. |
