| 摘要 |
PURPOSE:To shorten the manufacturing steps of a high frequency Schottky barrier gate type FET by forming ohmically contacting electrodes of source and drain and a Schottky contacting electrode of a gate of the same metal simultaneously. CONSTITUTION:Si<+> ion implanted layer 12' is formed on the surface layer of a semi-insulating GaAs substrate 11, a laminated mask made of an SiO2 film 13 and a photoresist film 14 is provided at the center, and Si<+> ions are implanted to a source forming region 15' and a drain forming region 16'. Then, a Ge film is covered on the overall surface, a Ge film 17' is formed on the film 14, a Ge film 17 is formed on the regions 15', 16', and the film 14 is removed together with the film 17' formed thereon. Subsequently, with the remaining film 13 as a mask As<+> ions are implanted to the film 17, and the film is heat treated to form N<+> type regions 15, 16 and an N type region 12. Then, a source electrode 23s, drain electrode 23d and gate electrode 23g made of Ti layer 21 and an aluminum layer 22 are simultaneously attached on the film 17 and the region 12 interposed therebetween. |
