| 摘要 |
PURPOSE:To enable the formation of fine patterns without the need of a photo mask and the like by a method wherein a compound film containing carbon is formed by irradiation of a sample with electron rays in a low pressure atmosphere in which a carbon source is present, and this film is then used for a mask. CONSTITUTION:A thermal oxide film 2 is formed on a P type Si substrate 1. Next, only the field region of the substrate is irradiated with electron beams in an electron beam exposure device decreased in pressure by means of a diffusion pump. Thereat, oil molecules present in the atmosphere are adsorbed to the surface of the field region irradiated with electron beams, resulting in the formation of the compound film 3 containing carbon. Successively, a field oxide film 4 is formed by etching of the film 2 with this film 3 as the mask. The film 3 is removed, and then an MOS transistor is formed in the element region surrounded by the film 4. This method enables the formation of fine patterns without the need of a photo mask or a resist resulting in the reduction in cost. |
