PHOTO ELECTRIC TRANSDUCER

摘要

PURPOSE:To obtain an insulated gate type thin-film transistor consisting of crystallite silicon of high reliability and excellent characteristics by forming a gate insulating film by the compound insulating film of an anode oxide film and a protective film. CONSTITUTION:A gate electrod 20 consisting of Ta and a first insulating film 30 consisting of a thin Ta2O5 film anodic-oxidized are formed on a glass substrate 10, and an Si3N4 film is laminated as a second insulating film 31. A crystallite silicon layer through the decomposition of SiH4 gas diluted with a large amount of hydrogen by glow discharge is laminated as a semiconductor layer 40, Ti is evaporated as a source electrode 50 and a drain electrode 60, and Si3N4 is laminated as a protective film 70. The Ta2O5 film of excellent insulating property can be maintained after forming the semiconductor layer 40 because the Si3N4 film is protected when forming the crystallite silicon layer by glow discharge.