发明名称 POSITIVE TYPE PHOTORESIST COMPOSITION
摘要 PURPOSE:To enhance dry etching resistance by using a novolak resin contg. naphthol as a condensing component, as an alkali-soluble resin for use in a 1,2- naphtho-quinonediazide-derived positive type photoresist. CONSTITUTION:A novolak resin is prepared by condensing formaldehyde with a mixture of 40-95mol% alpha-naphthol and 60-5mol% p-cresol. This novolak resin alone or in combination with a cresol novolak resin is mixed with 1,2-naphthoquinone-diazide type compd., such as a triester of 1,2,3-trihydroxybenzophenone and 1,2-naphthoquinone-2-diazido-5-sulfonic acid to obtain an intended positive type photoresist compsn. This compsn. is applied to a substrate, exposed, and developed to form a resist superior in dry etching resistance.
申请公布号 JPS6050531(A) 申请公布日期 1985.03.20
申请号 JP19830158301 申请日期 1983.08.30
申请人 MITSUBISHI KASEI KOGYO KK 发明人 MIURA KONOE;NAGASAKA HIDEKI;TAKAHASHI NORIAKI;OCHIAI TAMEICHI;TAKASAKI RIYUUICHIROU
分类号 C08L61/00;C08L61/04;C08L61/06;G03C1/72;G03F7/022;G03F7/023;H01L21/027 主分类号 C08L61/00
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