| 摘要 |
PURPOSE:To obtain an SOI structure, which has excellent characteristics of an interface between an insulating film and a semiconductor layer to such a degree that a basis insulating film can be utilized as a gate insulating film, by forming the insulating film at a part of at least the upper layer or the lower layer of a microbridge, and forming a laminated structure of a semiconductor and the insulator. CONSTITUTION:An SiO2 film 8 is formed on a single crystal Si substrate 7. The film is isolated into rectangular islands by using a photolithography technology. A polycrystalline Si film is deposited on the film. Thereafter, the film is transformed into a single crystal Si film 9 by scanning a laser beam. A mask is applied on the film and etching is performed. Thus the SOI region is isolated into several islands. Then the SiO2 film is selectively etched, and an Si microbridge 30 is formed. The bridge undergoes thermal oxidation, and the surface is coated with the SiO2 film 8 having excellent quality. Thereafter, an MOSFET, which uses the SiO2 8 as a gate oxide film 4, is formed on the microbridge 30 by using normal processes. |
