| 摘要 |
1287247 Semi-conductor devices RCA CORPORATION 19 April 1971 [24 Feb 1970] 22088/71 Heading H1K A semi-conductor device comprises a semiconductor body 10 of one conductivity type into which is diffused, from one face 11, a peripheral region 18 of the opposite conductivity type, and a further central, region 30 also of the opposite conductivity type, so that regions 18 and 30 combine to form a single region. The diffusion of region 18 from one face 11, and a subsequent drive-in step causes the region to be of greater resistivity near the upper fcae 13, reducing the possibility of voltage breakdown at this face. The body 10 may be divided through the region 18 along lines 44 to provide a plurality of devices. A further region 34 of the opposite conductivity type may be diffused in from surface 13, simultaneously with the formation of region 30, to form a transistor emitter. Region 18 may be diffused from material deposited in peripheral grooves 14.
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