发明名称 MAGNETIC BUBBLE MEMORY DEVICE
摘要 PURPOSE:To enlarge a positioning allowance degree of an ion implantation pattern and a ''Permalloy'' pattern by making the joining direction of both the patterns uniform in the same direction. CONSTITUTION:A minor loop 12 is a prescribed bend pattern, and plural joining parts of an ion implantation pattern 13 and a ''Permalloy'' pattern 14 are made uniform so that the respective joining directions of the same kind such as the joining direction of joining parts 1, 3 to the pattern 13 from the pattern 14, the joining direction of joining parts 2, 4 to the pattern 14 from the pattern 13, etc. become the same. Accordingly, as if the pattern 14 is shifted a little in the vertical direction to major lines 10, 11, etc., a relative relation of the patterns 13, 14 becomes the same. As a result, a positioning allowance degree of the ion implantation pattern and the ''Permalloy'' pattern becomes large.
申请公布号 JPS6050693(A) 申请公布日期 1985.03.20
申请号 JP19830157073 申请日期 1983.08.30
申请人 FUJITSU KK 发明人 YONENOU KAZUNARI
分类号 G11C11/14 主分类号 G11C11/14
代理机构 代理人
主权项
地址